Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures (1993) (Springer Series in Materials Science #26)
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- Synopsis
- The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
- Copyright:
- 1993
Book Details
- Book Quality:
- Publisher Quality
- ISBN-13:
- 9783642781278
- Related ISBNs:
- 9783540565406
- Publisher:
- Springer Berlin Heidelberg
- Date of Addition:
- 08/14/22
- Copyrighted By:
- N/A
- Adult content:
- No
- Language:
- English
- Has Image Descriptions:
- No
- Categories:
- Nonfiction, Science, Technology
- Submitted By:
- Bookshare Staff
- Usage Restrictions:
- This is a copyrighted book.
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