Heteroepitaxy of Semiconductors Theory, Growth, and Characterization, Second Edition

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Synopsis

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Book details

Edition:
2
Author:
John E. Ayers, Tedi Kujofsa, Paul Rago, Johanna Raphael
ISBN:
9781482254365
Related ISBNs:
9781482254365, 9781315372440, 9781482254358, 9781482254358, 9781482254365, 9781315372440, 9780367655808, 9781482254358
Publisher:
CRC Press
Pages:
643
Reading age:
Not specified
Includes images:
No
Date of addition:
2019-04-25
Usage restrictions:
Copyright
Copyright date:
2016
Copyright by:
N/A 
Adult content:
No
Language:
English
Categories:
Nonfiction, Technology